Antireflective silicon-containing compositions as hardmask layer
US6420088B1 · kind B1 · utility
125Cited by
16References
8Claims
0Family size
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Key dates
| Filing date | Jun 23, 2000 |
| Grant date | Jul 16, 2002 |
| Priority date | — |
| Expiry date | Jul 28, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/151
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
Antireflective compositions characterized by the presence of an SiO-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.