Methods for fabricating light emitting devices having aluminum gallium indium nitride structures and mirror stacks

US6420199B1 · kind B1 · utility

Assignee

• Lumileds Lighting US, LLC · US

Inventors

• Carrie Carter Coman · San Jose, US
• R. Scott Kern · San Jose, US
• Fred A. Kish, Jr. · Palo Alto, US
• Michael R. Krames · Los Altos, US
• Arto Nurmikko · Providence, US
• Yoon-Kyu Song · East Greenwich, US

Key dates

• Filing date: Aug 6, 2001
• Grant date: Jul 16, 2002
• Expiry date: Aug 6, 2021

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/977
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.