Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate
US6420279B1 · kind B1 · utility
745Cited by
4References
19Claims
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Key dates
| Filing date | Jun 28, 2001 |
| Grant date | Jul 16, 2002 |
| Priority date | — |
| Expiry date | Jun 28, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/022
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming hafnium oxide, zirconium oxide and nanolaminates of hafnium oxide and zirconium oxide are provided. These methods utilize atomic layer deposition techniques incorporating nitrate-based precursors, such as hafnium nitrate and zirconium nitrate. The use of these nitrate based precursors is well suited to forming high dielectric constant materials on hydrogen passivated silicon surfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.