Yoshi Ono
74Patents
20h-index
30Co-inventors
84Inventor score
Filing activity: Apr 30, 1998 → Oct 7, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6420279B1 | Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate | Electricity | 745 | Expired |
| US6627503B2 | Method of forming a multilayer dielectric stack | Electricity | 649 | Expired |
| US6297539A | Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same | Electricity | 604 | Expired |
| US6930059B2 | Method for depositing a nanolaminate film by atomic layer deposition | Electricity | 594 | Expired |
| US7053009B2 | Nanolaminate film atomic layer deposition method | Electricity | 551 | Expired |
| US6875677B1 | Method to control the interfacial layer for deposition of high dielectric constant films | Electricity | 534 | Expired |
| US6407435B1 | Multilayer dielectric stack and method | Electricity | 278 | Expired |
| US6825106B1 | Method of depositing a conductive niobium monoxide film for MOSFET gates | Electricity | 267 | Expired |
| US6060755A | Aluminum-doped zirconium dielectric film transistor structure and deposition method for same | Electricity | 159 | Expired |
| US6207589A | Method of forming a doped metal oxide dielectric film | Electricity | 100 | Expired |
| US6200866A | Use of silicon germanium and other alloys as the replacement gate for the fabrication of MOSFET | Electricity | 70 | Expired |
| US6573134B2 | Dual metal gate CMOS devices and method for making the same | Electricity | 62 | Expired |
| US6686212B1 | Method to deposit a stacked high-&kgr; gate dielectric for CMOS applications | Electricity | 57 | Expired |
| US6348373B1 | Method for improving electrical properties of high dielectric constant films | Electricity | 49 | Expired |
| US6184110A | Method of forming nitrogen implanted ultrathin gate oxide for dual gate CMOS devices | Electricity | 41 | Expired |
| US7160819B2 | Method to perform selective atomic layer deposition of zinc oxide | Electricity | 37 | Expired |
| US6403453B1 | Dose control technique for plasma doping in ultra-shallow junction formations | Electricity | 35 | Expired |
| US7309621B2 | Method to fabricate a nanowire CHEMFET sensor device using selective nanowire deposition | Electricity | 32 | Expired |
| US7442415B2 | Modulated temperature method of atomic layer deposition (ALD) of high dielectric constant films | Electricity | 27 | Expired |
| US6861712B2 | MOSFET threshold voltage tuning with metal gate stack control | Electricity | 20 | Expired |
| US6468901B1 | Nickel silicide including iridium for use in ultra-shallow junctions with high thermal stability and method of manufacturing the same | Electricity | 17 | Expired |
| US6689646B1 | Plasma method for fabricating oxide thin films | Electricity | 15 | Expired |
| US6190925A | Epitaxially grown lead germanate film and deposition method | Emerging Cross-Sectional Technologies | 15 | Expired |
| US7208768B2 | Electroluminescent device | Emerging Cross-Sectional Technologies | 14 | Expired |
| US7029944B1 | Methods of forming a microlens array over a substrate employing a CMP stop | Electricity | 14 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.