Light emitting diode and manufacturing method thereof
US6420731B1 · kind B1 · utility
4Cited by
9References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 26, 2000 |
| Grant date | Jul 16, 2002 |
| Priority date | — |
| Expiry date | Jun 26, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
Abstract
An injected current restriction region for restricting an increase in defects by restricting an injected current for light emission is provided inside a ZnSe-based LED. When an end of a light transmitting Au electrode is separated from a cleavage plane, a region near the cleavage plane serves as the injected current restriction region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.