Window for gallium nitride light emitting diode

US6420736B1 · kind B1 · utility

Assignee

• AXT, INC. · US

Inventors

• John Chen · Walnut, US
• Bingwen Liang · Sunnyvale, US
• Robert Shih · Hsinchu, TW

Key dates

• Filing date: Jul 26, 2000
• Grant date: Jul 16, 2002
• Expiry date: Jul 26, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

A window structure for a gallium nitride (GaN)-based light emitting diode (LED) includes a Mg+ doped p window layer of a GaN compound; a thin, semi-transparent metal contact layer; and an amorphous current spreading layer formed on the contact layer. The contact layer is formed of NiOx/Au and the current spreading layer is formed of Indium Tin Oxide. The p electrode of the diode includes a titanium adhesion layer which forms an ohmic connection with the current spreading layer and a Schottky diode connection with the Mg+ doped window layer.