Semiconductor device
US6420743B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2000 |
| Grant date | Jul 16, 2002 |
| Priority date | — |
| Expiry date | Aug 11, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/30
Abstract
Object: In a semiconductor device with ferroelectric capacitors, variations in the characteristics of the ferroelectric capacitors are reduced, and changes in the characteristic of the ferroelectric capacitor, i.e., characteristic deterioration with passage of time, is suppressed.Measure to Solve: Lower electrodes 111a that extend along a first direction D1 and have a plan configuration having a second direction D2 perpendicular to the first direction as its width direction, a plurality of upper electrodes 112a that are disposed on the lower electrodes 111a opposite to the lower electrodes, and ferroelectric layers that are disposed between the electrodes constitute ferroelectric capacitors 110a, and a plan configuration of the upper electrode 112a is made a shape of the size in the first direction D1 being smaller than the size in the second direction D2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.