Patent · US Expired

Electrochemical cobalt silicide liner for metal contact fills and damascene processes

US6420784B2 · kind B2 · utility

16Cited by
9References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 19, 2000
Grant dateJul 16, 2002
Priority date—
Expiry dateDec 19, 2020

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/76868
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A liner material and method of use is disclosed. The method includes depositing a silicon layer into a deep void, such as a via or trench, and physical vapor depositing a cobalt seed layer onto the silicon. A supplemental cobalt layer is electroplated over the seed layer. The structure is then annealed, forming cobalt silicide (CoSix). The layer can be made very thin, facilitating further filling the via with highly conductive metals. Advantageously, the layer is devoid of oxygen and nitrogen, and thus allows low temperature metal reflows in filling the via. The liner material has particular utility in a variety of integrated circuit metallization processes, such as damascene and dual damascene processes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.