One-time programmable memory cell in CMOS technology
US6421293B1 · kind B1 · utility
53Cited by
13References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1999 |
| Grant date | Jul 16, 2002 |
| Priority date | — |
| Expiry date | Dec 22, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B20/25
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An OTP memory cell in CMOS technology, including a capacitor associated in series with an unbalanced programming transistor, the drain of which is made of a region deeper and less doped than the source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.