Jean-Pierre Schoellkopf
27Patents
7h-index
13Co-inventors
66Inventor score
Filing activity: Oct 22, 1987 → Oct 7, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6421293B1 | One-time programmable memory cell in CMOS technology | Electricity | 53 | Expired |
| US4922409A | Bus control device comprising a plurality of isolatable segments | Physics | 23 | Expired |
| US5498983A | Device for checking the skew between two clock signals | Physics | 13 | Expired |
| US6166607A | Semiconductor test structure formed in cutting path of semiconductor water | Electricity | 12 | Expired |
| US5568072A | Circuit indicating the phase relation between several signals having the same frequency | Electricity | 9 | Expired |
| US6297093A | Method of making an electrically programmable memory cell | Electricity | 8 | Expired |
| US6378108B1 | Parity checking circuit | Electricity | 7 | Expired |
| US6473725B1 | Method of accurate simulation of logic circuits | Physics | 7 | Expired |
| US6580130B1 | Process for producing a resistor in an integrated circuit and corresponding integrated static random access memory device having four transistors and two resistors | Electricity | 7 | Expired |
| US8339172B2 | Flip-flop with single clock phase and with reduced dynamic power | Electricity | 6 | Active |
| US6253352A | Circuit for validating simulation models | Physics | 6 | Expired |
| US6304480A | Read only memory integrated semiconductor device | Physics | 5 | Expired |
| US6018475A | MOS memory point | Physics | 5 | Expired |
| US7333380B2 | SRAM memory device with flash clear and corresponding flash clear method | Emerging Cross-Sectional Technologies | 4 | Active |
| US7272775B2 | Memory circuit comprising an error correcting code | Physics | 4 | Expired |
| US7521764B2 | One-time programmable memory device | Emerging Cross-Sectional Technologies | 3 | Active |
| US6094383A | Programmable non-volatile memory device and method of programming the same | Physics | 2 | Expired |
| US6977840B2 | Storage element with a defined number of write cycles | Physics | 1 | Expired |
| US6521942B2 | Electrically programmable memory cell | Electricity | 1 | Expired |
| US7638828B2 | Embedded capacitor | Electricity | 1 | Expired |
| US6525582B2 | Latch operating with a low swing clock signal | Electricity | 0 | Expired |
| US7545035B2 | Semiconductor device having several assembled integrated-circuit chips and method of assembling and electrically connecting the integrated-circuit chips | Electricity | 0 | Active |
| US7453105B2 | Integrated circuit power supply network | Electricity | 0 | Active |
| US7646069B2 | High density integrated read-only memory (ROM) with reduced access time | Emerging Cross-Sectional Technologies | 0 | Active |
| US7029927B2 | Method of repairing an integrated electronic circuit using a formed electrical isolation | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.