Sputtering apparatus and film forming method
US6423192B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2000 |
| Grant date | Jul 23, 2002 |
| Priority date | — |
| Expiry date | Oct 27, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A sputtering apparatus includes a process chamber for accommodating a semiconductor wafer. A susceptor is disposed on the bottom of the interior of the process chamber, and a sputter target is disposed at the top of the process chamber. A cylindrical ion reflecting plate is disposed along the inner wall of the process chamber. A lower grounded component, which forms a path along which electrons are released, is disposed below the ion reflecting plate so as to surround the susceptor. A magnet is disposed behind the target outside the process chamber. Negative potentials are applied to the target and semiconductor wafer, and a positive potential is applied to the ion reflecting plate. The magnet forms a closed magnetic field for trapping electrons in a plasma on the surface of the target, and a divergent magnetic field for directing the electrons in the plasma to the lower grounded component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.