Method of making an optoelectronic device using multiple etch stop layers
US6423560B1 · kind B1 · utility
9Cited by
10References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2000 |
| Grant date | Jul 23, 2002 |
| Priority date | — |
| Expiry date | Nov 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/013
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This invention provides a method for making interdigitated optoelectronic devices in which the surfaces of the photonic devices, emitters and detectors, are protected from contaminants during processing through the use of multiple etch stop layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.