Method for manufacturing semiconductor dynamic quantity sensor
US6423563B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 2001 |
| Grant date | Jul 23, 2002 |
| Priority date | — |
| Expiry date | May 22, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/084
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor dynamic quantity sensor includes a semiconductor support substrate having a specific resistance equal to or less than 3&OHgr; cm. An insulation film is provided on the support substrate and a semiconductor layer is provided on the support substrate with the insulation film interposed therebetween. The semiconductor layer has a specific resistance equal to or less than 3&OHgr; cm. A movable electrode is provided in the semiconductor layer to be displaced according to a dynamic quantity acting thereto. A fixed electrode is fixedly provided in the semiconductor layer to make a specific gap with the movable electrode and to from a capacitor with the movable electrode. The capacitor has a capacity that changes in response to displacement of the movable electrode to detect the dynamic quantity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.