Method of delaminating a thin film using non-thermal techniques
US6423614B1 · kind B1 · utility
359Cited by
13References
13Claims
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Inventor
Key dates
| Filing date | Jun 30, 1998 |
| Grant date | Jul 23, 2002 |
| Priority date | — |
| Expiry date | Jun 30, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an integrated circuit is provided. A semiconductor film is formed onto a first substrate. A metal film is formed onto a second substrate. The second substrate is bonded with the metal film onto the thin film of the first substrate. A first layer of transistors is formed onto the film. The second substrate is removed at a temperature within a low temperature range. The semiconductor film is bonded with the first layer of transistors onto a second layer of transistors of a third substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.