Controllable oxidation technique for the formation of high-quality ultra-thin gate oxide using carbon dioxide as the oxidizing agent
US6423648B1 · kind B1 · utility
1Cited by
10References
14Claims
0Family size
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Key dates
| Filing date | Dec 14, 2000 |
| Grant date | Jul 23, 2002 |
| Priority date | — |
| Expiry date | Dec 14, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an ultra-thin gate oxide (14) for a field effect transistor (10). The gate oxide (14) is formed by combining an oxidizing agent (e.g., N2O, CO2) with an etching agent (e.g., H2) and adjusting the partial pressures to controllably grow a thin (˜12 Angstroms) high quality oxide (14).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.