Method of manufacturing a semiconductor device having silicon oxynitride passavation layer
US6423654B1 · kind B1 · utility
5Cited by
8References
7Claims
0Family size
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Key dates
| Filing date | Feb 8, 2000 |
| Grant date | Jul 23, 2002 |
| Priority date | — |
| Expiry date | Feb 8, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/909
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a semiconductor device having a silicon oxynitride passivation layer and a fabrication method thereof. The passivation layer is formed of a silicon oxynitride having a dielectric constant of 5.0-6.0 and an atomic composition ratio of silicon (25-40%), oxygen (25-40%), and nitrogen (25-40%). Therefore, the passivation layer has a low dielectric constant and is highly moisture-resistant to thereby reduce the parasitic capacitance between metal wiring layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.