Semiconductor device having a hall-effect element
US6424018B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | May 30, 2000 |
| Grant date | Jul 23, 2002 |
| Priority date | — |
| Expiry date | May 30, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N59/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A first and a second Hall element (2 and 3) for current detection, in addition to a semiconductor element (4) for an electric circuit, are provided on a semiconductor substrate. A conductor layer (5), through which flows the current of the semiconductor element (4), is formed on an insulating film (20) on the surface of the semiconductor substrate. The conductor layer (5) is arranged along the first and second Hall elements (2 and 3) for higher sensitivity. The magnetic flux created by the flow of a current through the conductor layer (5) is applied to the first and second Hall elements (2 and 3). The first and second Hall voltages obtained from the first and second Hall elements (2 and 3) are totaled for higher sensitivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.