Integration of fluorinated dielectrics in multi-level metallizations
US6424040B1 · kind B1 · utility
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2Claims
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Key dates
| Filing date | Feb 4, 1999 |
| Grant date | Jul 23, 2002 |
| Priority date | — |
| Expiry date | Feb 4, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Deposition of titanium over fluoride-containing dielectrics requires the use of a method of passivation to prevent the formation of TiF4, which causes delamination of the metallization structure. Disclosed methods include the formation of layers of Al203, TiN, or Si3N4.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.