Spin valve magnetoresistive sensor for high temperature environment using iridium manganese
US6424507B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2000 |
| Grant date | Jul 23, 2002 |
| Priority date | — |
| Expiry date | Apr 3, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive read sensor fabricated on a substrate includes a ferromagnetic layer that is exchange coupled with an antiferromagnetic layer made of a defined composition of iridium manganese. A tantalum layer is used so that the exchange field and coercivity do not change with variations in annealing temperature. The antiferromagnetic layer is formed with a material composition of Irx Mn100-x, wherein x is in the range of 15<x>23. In an embodiment of a spin valve structure, the tantalum layer is disposed over the substrate and the antiferromagnetic layer is in direct contact with a pinned ferromagnetic layer. In another embodiment, the IrMn layer is formed over a soft active layer. In a third embodiment using exchange pinning, spaced IrMn regions are formed over the active magnetoresistive layer to define the sensor track width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.