Photoresist monomer, polymer thereof and photoresist composition containing it
US6426171B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2000 |
| Grant date | Jul 30, 2002 |
| Priority date | — |
| Expiry date | Jul 28, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0395
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
The present invention provides novel bicyclic photoresist monomers, and photoresist copolymer derived from the same. The bicyclic photoresist monomers of the present invention are represented by the formula: where m, n, R, V and B are those defined herein. The photoresist composition comprising the photoresist copolymer of the present invention has excellent etching resistance and heat resistance, and remarkably enhanced PED stability (post exposure delay stability).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.