Method of manufacturing a semiconductor integrated circuit device
US6426258B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1998 |
| Grant date | Jul 30, 2002 |
| Priority date | — |
| Expiry date | Dec 23, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor integrated circuit device comprises forming a gate insulating film on a surface of a semiconductor substrate of a first conductivity type, forming a polycrystal silicon film on the gate insulating film, etching the polycrystal silicon film to form a gate electrode on a portion of the gate insulating film, etching the gate insulating film except at the portion thereof where the gate electrode has been formed, and forming a thermal oxide film on the semiconductor substrate at regions corresponding to the etched gate insulating film. Impurities of a second conductivity type are implanted into a source region in the semiconductor substrate through the thermal oxide film to form a body region of the second conductivity type. The semiconductor substrate is then heated at a temperature of 1000° C. or higher. Impurities of the first conductivity type are then implanted into the body region at an inclination angle equal to or greater than 7° with respect to a line perpendicular to the surface of the semiconductor substrate so that the impurities of the first conductivity type are implanted to a depth from the surface of the semiconductor sub…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.