Substrate processing method and method of manufacturing semiconductor substrate
US6426270B1 · kind B1 · utility
39Cited by
13References
39Claims
0Family size
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Key dates
| Filing date | Feb 1, 2000 |
| Grant date | Jul 30, 2002 |
| Priority date | — |
| Expiry date | Feb 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76259
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of bonding first and second substrates to prepare a bonded substrate stack and then separating the bonded substrate stack at a porous layer to manufacture an SOI substrate, planarization of the first substrate after separation and reuse of the first substrate are facilitated. First, an insulating layer remaining at the outer peripheral portion of a first substrate after separation is selectively removed, and then, a porous layer on a single-crystal Si substrate is selectively removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.