Method and apparatus for manufacturing semiconductor device
US6426299B1 · kind B1 · utility
2Cited by
4References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 21, 2000 |
| Grant date | Jul 30, 2002 |
| Priority date | — |
| Expiry date | Nov 21, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76802
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A second interlayer film is etched by an etching gas including fluorocarbon gas after a switch box is switched so that high frequency electricity is applied to an upper electrode. Then, the switch box is switched so that low power electricity is applied only to a lower-electrode/wafer-holder to generate plasma with using only fluorocarbon gas. The generated plasma etches a first interlayer film, and fluorine radicals dissociated from the fluorocarbon removes a hardened resist surface layer. It realizes etching with less damage on bases, because energy of incident ions is low.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.