Patterned plasma nitridation for selective epi and silicide formation
US6426305B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2001 |
| Grant date | Jul 30, 2002 |
| Priority date | — |
| Expiry date | Jul 3, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0217
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of selectively forming either an epi-Si-containing or a silicide layer on portions of a Si-containing substrate wherein a nitrogen-containing layer formed by a low-temperature nitridation process is employed to prevent formation of the epi-Si-containing or silicide layer in predetermined areas of the substrate. The method of the present invention includes the steps of subjecting at least one exposed surface of a Si-containing substrate to a low- temperature nitridation process so as to form a nitrogen-containing layer at or near the at least one exposed surface, wherein other surfaces of the Si-containing substrate are protected by a patterned photoresist; removing the patterned photoresist from the other surfaces of the Si-containing substrate; and forming an epi-Si-containing layer or a silicide layer on the other surfaces of the substrate which do not contain the nitrogen-containing layer. In accordance with the present invention, epi-Si-containing or silicide is not formed in areas containing the nitrogen-containing layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.