Inventor · Beacon, NY, US

Anthony I. Chou

80Patents
10h-index
80Co-inventors
81Inventor score

Filing activity: Jul 3, 2001 → Jun 15, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US6930060B2 Method for forming a uniform distribution of nitrogen in silicon oxynitride gate dielectric Electricity 76 Expired
US6821833B1 Method for separately optimizing thin gate dielectric of PMOS and NMOS transistors within the same semiconductor chip and device manufactured thereby Electricity 22 Expired
US6780720B2 Method for fabricating a nitrided silicon-oxide gate dielectric Electricity 18 Expired
US9412667B2 Asymmetric high-k dielectric for reducing gate induced drain leakage Electricity 17 Active
US7160771B2 Forming gate oxides having multiple thicknesses Electricity 13 Expired
US6426305B1 Patterned plasma nitridation for selective epi and silicide formation Electricity 12 Expired
US9530798B1 High performance heat shields with reduced capacitance Electricity 12 Active
US9570354B2 Asymmetric high-K dielectric for reducing gate induced drain leakage Electricity 11 Active
US9269786B2 Silicon nitride layer deposited at low temperature to prevent gate dielectric regrowth high-K metal gate field effect transistors Electricity 11 Active
US9577061B2 Asymmetric high-K dielectric for reducing gate induced drain leakage Electricity 10 Active
US9543213B2 Asymmetric high-k dielectric for reducing gate induced drain leakage Electricity 9 Active
US9685379B2 Asymmetric high-k dielectric for reducing gate induced drain leakage Electricity 8 Active
US9450072B2 Replacement gate structure for enhancing conductivity Electricity 8 Active
US7893494B2 Method and structure for SOI body contact FET with reduced parasitic capacitance Electricity 8 Active
US9595518B1 Fin-type metal-semiconductor resistors and fabrication methods thereof Electricity 7 Active
US9559010B2 Asymmetric high-k dielectric for reducing gate induced drain leakage Electricity 7 Active
US9859122B2 Asymmetric high-k dielectric for reducing gate induced drain leakage Electricity 7 Active
US8299519B2 Read transistor for single poly non-volatile memory using body contacted SOI device Electricity 7 Active
US9721843B2 Asymmetric high-k dielectric for reducing gate induced drain leakage Electricity 6 Active
US9627480B2 Junction butting structure using nonuniform trench shape Electricity 6 Active
US9768195B2 Semiconductor structure with integrated passive structures Electricity 6 Active
US6995065B2 Selective post-doping of gate structures by means of selective oxide growth Electricity 6 Expired
US9922831B2 Asymmetric high-k dielectric for reducing gate induced drain leakage Electricity 5 Active
US8343781B2 Electrical mask inspection Electricity 5 Active
US9768071B2 Asymmetric high-K dielectric for reducing gate induced drain leakage Electricity 5 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.