Method of manufacturing an aluminum oxide film in a semiconductor device
US6426307B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 15, 2001 |
| Grant date | Jul 30, 2002 |
| Priority date | — |
| Expiry date | Jun 15, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a method of manufacturing an aluminum oxide film using atomic layer deposition, alcohol is delivered as an oxygen source instead of water vapor into a reactor via a different delivery line from an aluminum source. Thus, the disclosed method can prevent degradation of an aluminum oxide thin film in uniform fashion by a chemical vapor deposition method that is parasitically generated. Also, an activation gas is delivered into the reactor at about the same time an aluminum source and an alcoholic gas is delivered. Therefore, the disclosed method can prevent reduction in the deposition rate and also prohibit degradation in an electrical property by impurity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.