Formation of multisegmented plated through holes
US6426470B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2001 |
| Grant date | Jul 30, 2002 |
| Priority date | — |
| Expiry date | Jan 17, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24917
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method and structure relating to multisegmented plated through holes. A substrate includes a dielectric layer sandwiched between a first laminate layer and a second laminate layer. A through hole is formed through the substrate. The through hole passes through nonplatable dielectric material within the dielectric layer. As a result, subsequent seeding and electroplating of the through hole results in a conductive metal plating forming at a wall of the through hole on a segment of the first laminate layer and on a segment of the second laminate layer, but not on the nonplatable dielectric material of the dielectric layer. Thus, the conductive metal plating is not continuous from the first laminate layer to the second laminate layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.