Epitaxial growth substrate and a method for producing the same
US6426519B1 · kind B1 · utility
35Cited by
4References
9Claims
0Family size
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Key dates
| Filing date | Nov 15, 2000 |
| Grant date | Jul 30, 2002 |
| Priority date | — |
| Expiry date | Dec 2, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02647
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Strip-shaped ditches are formed on a sapphire substrate as a base material. Then, the sapphire substrate is set into a CVD chamber, and an AlxGayInzN (x+y+z=1,x>0,y,z≧0)film is epitaxially grown on the sapphire substrate so as to embed the ditches by a selective lateral epitaxial growth method. As a result, the AlxGayInzN film has low dislocation density areas on at least one of the concave portions and the convex portions of the strip-shaped ditches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.