Tomohiko Shibata
71Patents
10h-index
42Co-inventors
78Inventor score
Filing activity: Sep 24, 1997 → May 21, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6495894B2 | Photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating substrate | Electricity | 39 | Expired |
| US6426519B1 | Epitaxial growth substrate and a method for producing the same | Electricity | 35 | Expired |
| US6534795B2 | Semiconductor light-emitting element | Electricity | 17 | Expired |
| US7033439B2 | Apparatus for fabricating a III-V nitride film and a method for fabricating the same | Emerging Cross-Sectional Technologies | 14 | Expired |
| US6342748B1 | Surface acoustic wave device, substrate therefor and method of manufacturing the substrate | Electricity | 13 | Expired |
| US7815235B2 | Tonneau cover unit | Emerging Cross-Sectional Technologies | 13 | Active |
| US8227789B2 | Optical semiconductor device and method of manufacturing the same | Electricity | 13 | Active |
| US5936329A | Surface acoustic wave device, substrate therefor, and method of manufacturing the substrate | Electricity | 12 | Expired |
| US6865174B1 | Code division multiple access communication system | Electricity | 12 | Expired |
| US6573535B2 | Semiconductor light-emitting element | Electricity | 10 | Expired |
| US6989202B2 | Method for fabricating a III nitride film, an underlayer for fabricating a III nitride film and a method for fabricating the same underlayer | Electricity | 10 | Expired |
| US6770914B2 | III nitride semiconductor substrate for ELO | Electricity | 10 | Expired |
| US6183555A | Surface acoustic wave device, substrate therefor, and method of manufacturing the substrate | Electricity | 9 | Expired |
| US9006865B2 | Epitaxial growth substrate, semiconductor device, and epitaxial growth method | Electricity | 9 | Active |
| US6869702B2 | Substrate for epitaxial growth | Emerging Cross-Sectional Technologies | 8 | Expired |
| US6583468B2 | Semiconductor element | Electricity | 8 | Expired |
| US8426893B2 | Epitaxial substrate for electronic device and method of producing the same | Electricity | 8 | Active |
| US6275123A | Surface acoustic wave matched filter with dispersive substrate and saw group velocity based output electrode design | Electricity | 8 | Expired |
| US7955437B2 | Apparatus for fabricating a III-V nitride film | Electricity | 6 | Expired |
| US6649493B2 | Method for fabricating a III nitride film, and underlayer for fabricating a III nitride film and a method for fabricating the same underlayer | Electricity | 6 | Expired |
| US8847203B2 | Group III nitride epitaxial laminate substrate | Electricity | 5 | Active |
| US6707076B2 | Semiconductor element | Electricity | 4 | Expired |
| US8410472B2 | Epitaxial substrate for electronic device and method of producing the same | Electricity | 4 | Active |
| US7687824B2 | Method of improving surface flatness of group-III nitride crystal, substrate for epitaxial growth, and semiconductor device | Electricity | 4 | Active |
| US6709703B2 | Method for fabricating a III-V nitride film and an apparatus for fabricating the same | Electricity | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.