Method for growing low defect density silicon carbide
US6428621B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2001 |
| Grant date | Aug 6, 2002 |
| Priority date | — |
| Expiry date | Feb 14, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1016
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A low defect (e.g., dislocation and micropipe) density silicon carbide (SiC) is provided as well as an apparatus and method for growing the same. The SiC crystal, growing using sublimation techniques, is preferably divided into two stages of growth. During the first stage of growth, the crystal grows in a normal direction while simultaneously expanding laterally. Although dislocation and other material defects may propagate within the axially grown material, defect propagation and generation in the laterally grown material are substantially reduced, if not altogether eliminated. After the crystal has expanded to the desired diameter, the second stage of growth begins in which lateral growth is suppressed and normal growth is enhanced. A substantially reduced defect density is maintained within the axially grown material that is based on the laterally grown first stage material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.