MEMS sensor structure and microfabrication process therefor
US6428713B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 1, 1999 |
| Grant date | Aug 6, 2002 |
| Priority date | — |
| Expiry date | Oct 1, 2019 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/019
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A micro-electro-mechanical structure including a semiconductor layer mounted to an annular support structure via an isolation layer wherein the semiconductor layer is micromachined to form a suspended body having a plurality of suspension projections extending from the body to the rim and groups of integral projections extending toward but spaced from the rim between said suspension projections. Each projection in said groups has a base attached to the body and a tip proximate the rim. The structure includes a plurality of inward projections extending from and supported on the rim and toward the body. Each such projection has a base attached to the rim and a tip proximate the body; wherein the grouped projections and the inward projections are arranged in an interdigitated fashion to define a plurality of proximate projection pairs independent of the suspension elements such that a primary capacitive gap is defined between the projections of each projection pair. Also, a process is disclosed for fabricating the micro-electro-mechanical structure including the steps of removing a highly doped etch termination layer and thereafter etching through a lightly doped epitaxial layer to th…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.