Vortex based CVD reactor
US6428847B1 · kind B1 · utility
24Cited by
12References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2000 |
| Grant date | Aug 6, 2002 |
| Priority date | — |
| Expiry date | Oct 16, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/14
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Chemical vapor deposition reactor incorporating gas flow vortex formation for uniform chemical vapor deposition upon a stationary wafer substrate. Gas flow including chemical vapors is introduced in tangential fashion to the interior of the heated reactor to provide for suitable uniform boundary layer control within the reactor upon the stationary wafer substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.