Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively, and multilayer products obtained
US6429098B1 · kind B1 · utility
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3References
37Claims
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Key dates
| Filing date | Sep 11, 2000 |
| Grant date | Aug 6, 2002 |
| Priority date | — |
| Expiry date | Sep 11, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The process consists in depositing, by chemical vapour deposition using a mixture of silicon and germanium precursor gases, a single-crystal layer of silicon or germanium on a germanium or silicon substrate by decreasing or increasing the temperature in the range 800-450° C. and at the same time by increasing the Si/Ge or Ge/Si weight ratio from 0 to 100% in the precursor gas mixture, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.