Implementing contacts for bodies of semiconductor-on-insulator transistors
US6429099B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2000 |
| Grant date | Aug 6, 2002 |
| Priority date | — |
| Expiry date | Jan 5, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/967
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and semiconductor structure are provided for implementing body contacts for semiconductor-on-insulator transistors. A bulk semiconductor substrate is provided. A mask is applied to the bulk semiconductor substrate to block an insulating implant layer in selected regions. The selected regions provide for body contact for transistors. Holes are formed extending into the bulk semiconductor substrate. The holes are filled with an electrically conductive material to create stud contacts to the bulk semiconductor substrate. In the preferred embodiment, the semiconductor-on-insulator is silicon on an oxide insulating layer and the invention provides a body contact for SOI transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.