MOCVD-grown emode HIGFET buffer
US6429103B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2000 |
| Grant date | Aug 6, 2002 |
| Priority date | — |
| Expiry date | Apr 13, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/93
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating an Emode HIGFET semiconductor device, and the device, is disclosed including epitaxially growing by metal-organic chemical vapor deposition an epitaxial buffer. The buffer includes a layer of short-lifetime gallium arsenide on a gallium arsenide substrate and a layer of aluminum gallium arsenide on the layer of short-lifetime gallium arsenide. The short-lifetime gallium arsenide is grown at a temperature below approximately 550° C. so as to have a lifetime less than approximately 500 picoseconds. A stack of compound semiconductor layers is then epitaxially grown on the layer of aluminum gallium arsenide of the buffer and an Emode field effect transistor is formed in the stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.