Method for forming cavities in a semiconductor substrate by implanting atoms
US6429104B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 18, 2000 |
| Grant date | Aug 6, 2002 |
| Priority date | — |
| Expiry date | Sep 18, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention concerns a method for treating substrates, in particular semiconductors, by implanting atoms so as to produce a substrate of cavities at a controlled depth, characterized in that it comprises steps which consists in: implanting atoms in the substrate at a first depth, to obtain a first concentration of atoms at said first depth; implanting atoms in the substrate at a second depth, different from the first, to obtain at said second depth, a second concentration of atoms, lower than the first; carrying out on the substrate a treatment for causing at least part of the atoms implanted in said second depth to migrate towards the first depth so as to create the cavities at the first depth preferably.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.