S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES
302Patents
165Active
302Granted
51Portfolio score
Filing activity: Aug 17, 2000 → Feb 4, 2013 · 160 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6867067B2 | Methods for fabricating final substrates | Emerging Cross-Sectional Technologies | 105 | Expired |
| US6794276B2 | Methods for fabricating a substrate | Electricity | 92 | Expired |
| US6955971B2 | Semiconductor structure and methods for fabricating same | Emerging Cross-Sectional Technologies | 69 | Expired |
| US6596610B1 | Method for reclaiming delaminated wafer and reclaimed delaminated wafer | Emerging Cross-Sectional Technologies | 62 | Expired |
| US6468879B1 | Method and device for separating a plate of material, in particular semiconductor material, into two wafers | Emerging Cross-Sectional Technologies | 52 | Expired |
| US6429104B1 | Method for forming cavities in a semiconductor substrate by implanting atoms | Emerging Cross-Sectional Technologies | 51 | Expired |
| US6951799B2 | Cutting thin layer(s) from semiconductor material(s) | Performing Operations; Transporting | 44 | Expired |
| US6953736B2 | Process for transferring a layer of strained semiconductor material | Emerging Cross-Sectional Technologies | 31 | Expired |
| US6858107B2 | Method of fabricating substrates, in particular for optics, electronics or optoelectronics | Emerging Cross-Sectional Technologies | 31 | Expired |
| US6815309B2 | Support-integrated donor wafers for repeated thin donor layer separation | Emerging Cross-Sectional Technologies | 30 | Expired |
| US7018909B2 | Forming structures that include a relaxed or pseudo-relaxed layer on a substrate | Electricity | 29 | Expired |
| US6991995B2 | Method of producing a semiconductor structure having at least one support substrate and an ultrathin layer | Electricity | 29 | Expired |
| US6964914B2 | Method of manufacturing a free-standing substrate made of monocrystalline semi-conductor material | Emerging Cross-Sectional Technologies | 28 | Expired |
| US6908828B2 | Support-integrated donor wafers for repeated thin donor layer separation | Emerging Cross-Sectional Technologies | 26 | Expired |
| US6962858B2 | Method for reducing free surface roughness of a semiconductor wafer | Electricity | 24 | Expired |
| US7235462B2 | Methods for fabricating a substrate | Electricity | 23 | Expired |
| US7232739B2 | Multifunctional metallic bonding | Electricity | 23 | Active |
| US7732306B2 | Methods for producing improved epitaxial materials | Electricity | 21 | Active |
| US7632739B2 | Fabrication of hybrid substrate with defect trapping zone | Electricity | 19 | Active |
| US7138325B2 | Method of manufacturing a wafer | Chemistry; Metallurgy | 19 | Expired |
| US7531428B2 | Recycling the reconditioned substrates for fabricating compound material wafers | Emerging Cross-Sectional Technologies | 18 | Expired |
| US7187162B2 | Tools and methods for disuniting semiconductor wafers | Emerging Cross-Sectional Technologies | 18 | Expired |
| US7022586B2 | Method for recycling a substrate | Electricity | 17 | Expired |
| US6989314B2 | Semiconductor structure and method of making same | Electricity | 17 | Expired |
| US7407867B2 | Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate | Emerging Cross-Sectional Technologies | 17 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.