Anisotropic formation process of oxide layers for vertical transistors
US6429148B1 · kind B1 · utility
77Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 9, 2001 |
| Grant date | Aug 6, 2002 |
| Priority date | — |
| Expiry date | Oct 9, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The method of the present invention forms a thin oxide layer on the circumferential wall of a recess in a trench and, at the same time, forms a thick oxide layer on the bottom surface of the recess. The thick oxide layer serves as the trench top oxide and the thin oxide layer serves as the gate oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.