Patent assignee · TW · COMPANY

Promos Technologies, Inc.

345Patents
66Active
345Granted
45Portfolio score

Filing activity: Jun 9, 1998 → Apr 5, 2011 · 65 expiring within 5 years

Most-cited patents

PatentTitleAreaCited byStatus
US6855610B2 Method of forming self-aligned contact structure with locally etched gate conductive layer Electricity 211 Expired
US6429148B1 Anisotropic formation process of oxide layers for vertical transistors Electricity 77 Expired
US7061823B2 Limited output address register technique providing selectively variable write latency in DDR2 (double data rate two) integrated circuit memory devices Physics 74 Expired
US7122415B2 Atomic layer deposition of interpoly oxides in a non-volatile memory device Electricity 54 Expired
US6526996B1 Dry clean method instead of traditional wet clean after metal etch Emerging Cross-Sectional Technologies 53 Expired
US6632742B2 Method for avoiding defects produced in the CMP process Electricity 50 Expired
US6885044B2 Arrays of nonvolatile memory cells wherein each cell has two conductive floating gates Emerging Cross-Sectional Technologies 40 Expired
US6123865A Method for improving etch uniformity during a wet etching process Electricity 33 Expired
US6432728B1 Method for integration optimization by chemical mechanical planarization end-pointing technique Electricity 33 Expired
US6703273B2 Aggressive capacitor array cell layout for narrow diameter DRAM trench capacitor structures via SOI technology Electricity 31 Expired
US7910429B2 Method of forming ONO-type sidewall with reduced bird's beak Electricity 29 Expired
US6511905B1 Semiconductor device with Si-Ge layer-containing low resistance, tunable contact Electricity 28 Expired
US6507800B1 Method for testing semiconductor wafers Electricity 27 Expired
US7018895B2 Nonvolatile memory cell with multiple floating gates formed after the select gate Physics 26 Expired
US6605535B1 Method of filling trenches using vapor-liquid-solid mechanism Emerging Cross-Sectional Technologies 25 Expired
US6818515B1 Method for fabricating semiconductor device with loop line pattern structure Electricity 24 Expired
US7679163B2 Phase-change memory element Electricity 22 Active
US6521956B1 Semiconductor device having contact of Si-Ge combined with cobalt silicide Electricity 21 Expired
US6143653A Method of forming tungsten interconnect with tungsten oxidation to prevent tungsten loss Electricity 21 Expired
US7660147B2 Programming method for phase change memory Physics 21 Active
US6399461B1 Addition of planarizing dielectric layer to reduce a dishing phenomena experienced during a chemical mechanical procedure used in the formation of shallow trench isolation regions Electricity 20 Expired
US6391705B1 Fabrication method of high-density semiconductor memory cell structure having a trench Electricity 20 Expired
US6838342B1 Nonvolatile memory fabrication methods comprising lateral recessing of dielectric sidewalls at substrate isolation regions Electricity 19 Expired
US6393210B1 Rapid thermal processing method and apparatus Electricity 18 Expired
US6701204B1 System and method for finding defective tools in a semiconductor fabrication facility Electricity 17 Expired

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.