Shared body and diffusion contact structure and method for fabricating same
US6429477B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2000 |
| Grant date | Aug 6, 2002 |
| Priority date | — |
| Expiry date | Oct 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The preferred embodiment overcomes the difficulties found in the background art by providing a body contact and diffusion contact formed in a single shared via for silicon on insulator (SOI) technologies. By forming the body contact and diffusion contact in a single shared via, device size is minimized and performance is improved. Particularly, the formed body contact connects the SOI layer with the underlying substrate to avoid instabilities and leakage resulting from a floating SOI channel region. The formed diffusion contact connects device diffusions to above wiring to facilitate device operation. By providing the body contact and diffusion contact together in a single shared via, the preferred embodiment avoids the area penalty that would result from separate contacts. Additionally, the preferred embodiment provides a body contact that is self aligned with other devices, minimizing tolerances needed while minimizing process complexity. Additionally, the shared via body contact and diffusion contact can be selectively formed borderless to adjacent gate conductors in the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.