Patent · US Expired

Connection element in an integrated circuit having a layer structure disposed between two conductive structures

US6429503B2 · kind B2 · utility

6Cited by

8References

8Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Matthias Lehr · Dresden, DE
Rene Tews · Dresden, DE
Jochen Müller · Hersbruck, DE
Jürgen Lindolf · Friedberg, DE

Key dates

Filing date	Jun 22, 2001
Grant date	Aug 6, 2002
Priority date	—
Expiry date	Jun 22, 2021

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A connection element in an integrated circuit having a layer structure disposed between two conductive structures. The layer structure is formed by an insulating layer, which can be destroyed by application of a predetermined voltage, and a silicon layer. The insulating layer adjoins a first conductive structure made of tungsten.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.