Microelectronic piezoelectric structure and method of forming the same
US6432546B1 · kind B1 · utility
32Cited by
15References
16Claims
0Family size
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Key dates
| Filing date | Jul 24, 2000 |
| Grant date | Aug 13, 2002 |
| Priority date | — |
| Expiry date | Jul 24, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/8554
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high quality epitaxial layer of monocrystalline Pb(Zr,Ti)O3 can be grown overlying large silicon wafers by first growing an strontium titanate layer on a silicon wafer. The strontium titanate layer is a monocrystalline layer spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.