Method for characterization of microelectronic feature quality
US6432729B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1999 |
| Grant date | Aug 13, 2002 |
| Priority date | — |
| Expiry date | Sep 29, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Disclosed is a method for characterizing the quality of microelectronic features using broadband white light. A highly collimated light source illuminates an area of a first wafer using broadband multi-spectral light. The angular distribution of the light scattered from the first wafer is then measured. Generally, the angle of the light source, detector, or both is altered and an angular distribution measurement taken at each angle, producing a scatter signature for the first wafer. Finally, the scatter signature of the first wafer is compared with a known scatter signature of a second wafer of good quality to determine the quality of the first wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.