Integrated circuit capacitor and method
US6432791B1 · kind B1 · utility
24Cited by
15References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2000 |
| Grant date | Aug 13, 2002 |
| Priority date | — |
| Expiry date | Apr 12, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
Capacitors for integrated circuits with a common polysilicon layer for both MOS gates (274, 276, 278) and capacitor (270) lower plates but with implanted doping for the gates and masked diffusive doping for the capacitor plates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.