Chemical mechanical polishing slurry useful for copper substrates
US6432828B1 · kind B1 · utility
26Cited by
24References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 18, 1998 |
| Grant date | Aug 13, 2002 |
| Priority date | — |
| Expiry date | Mar 18, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K3/1463
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A chemical mechanical polishing slurry comprising an oxidizing agent, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, titanium nitride, tantalum and tantalum nitride containing layers from a substrate. The slurry does not include a separate film-forming agent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.