Reticle having an interleave kerf
US6436589B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 8, 2000 |
| Grant date | Aug 20, 2002 |
| Priority date | — |
| Expiry date | Mar 1, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This invention includes a reticle used for making a semiconductor device in a photolithography process. The reticle has a device exposure region having sides and a device pattern within an area defined by the sides, an opaque chrome region disposed adjacent to the device region, and a kerf region surrounded by the opaque chrome region, the kerf region being offset from the sides of the device exposure region by the opaque chrome region. The reticle should facilitate a double exposure method of a photolithography process by interleaving adjacent exposures of a wafer during the photolithography process, while allowing the single exposure of the respective kerfs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.