Method for reducing soft error rates in semiconductor devices
US6436737B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 29, 2000 |
| Grant date | Aug 20, 2002 |
| Priority date | — |
| Expiry date | Jun 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/18165
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for reducing soft error rates in semiconductor devices includes adding an isotopically enriched 11B compound during the manufacture of a semiconductor device. Such isotopically enriched 11B compounds include orthoborates (BOR3), acyl borates (B(OCOR)3), peroxo borates (OOR)3, boronic acids (RB(OH)2), boron halides, boron hydrides, inorganic boranes, amine boranes, aminoboranes, carboranes, and borazines, where R is an alkyl group. Disclosed uses include adding between 1% to 100% of the isotopically enriched 11B compound to an underfill material in flip-chip assembly; adding between 1% to 100% of the isotopically enriched 11B compound to an encapsulent; and adding between 1% to 100% of the isotopically enriched 11B compound to an adhesive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.