Method of forming a copper-containing metal interconnect using a chemical mechanical planarization (CMP) slurry
US6436811B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2000 |
| Grant date | Aug 20, 2002 |
| Priority date | — |
| Expiry date | Dec 19, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to a process for forming a metal interconnect comprising the steps of forming a concave in an insulating film formed on a substrate, forming a copper-containing metal film over the whole surface such that the concave is filled with the metal and then polishing the copper-containing metal film by chemical mechanical polishing, characterized in that the polishing step is conducted using a chemical mechanical polishing slurry comprising a polishing material, an oxidizing agent and an adhesion inhibitor preventing adhesion of a polishing product to a polishing pad, while contacting the polishing pad to a polished surface with a pressure of at least 27 kPa. This invention allows us to prevent adhesion of a polishing product to a polishing pad and to form a uniform interconnect layer with an improved throughput, even when polishing a large amount of copper-containing metal during a polishing step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.