Methods and apparatus for adjusting beam parallelism in ion implanters
US6437350B1 · kind B1 · utility
29Cited by
7References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2000 |
| Grant date | Aug 20, 2002 |
| Priority date | — |
| Expiry date | Aug 28, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/1471
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for implanting ions in a workpiece, such as a semiconductor wafer, include generating an ion beam, measuring parallelism of the ion beam, adjusting the ion beam for a desired parallelism based on the measured parallelism, measuring a beam direction of the adjusted ion beam, orienting a workpiece at an implant angle referenced to the measured beam direction and performing an implant with the workpiece oriented at the implant angle referenced to the measured beam direction. The implant may be performed with a high degree of beam parallelism.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.