Diffusion barrier spikes for III-V structures
US6437372B1 · kind B1 · utility
21Cited by
18References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2000 |
| Grant date | Aug 20, 2002 |
| Priority date | — |
| Expiry date | Mar 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8242
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A diffusion preventing barrier spike is disclosed. The spike prevents diffusion of dopants into another layer without forming a pn junction in the layer. The spikes are illustratively Al or an aluminum containing material such as AlAs and have a thickness on the order of 1 nm. The spikes of the present invention may be used to stop dopant diffusion out of a doped layer in a variety of III-V semiconductor structures, such a InP-based PIN devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.